描述
– Equipped with RC-IGBT utilizing the 7th generation IGBT thin wafer structure, the package size is reduced by approximately 30% compared to the ultra-small DIP IPM
-Reduce the number of external components by using a built-in control IC with protection function and a BSD with current limiting resistor-
– The addition of a GND terminal for the high-voltage side drive power supply helps simplify the high-voltage terminal layout on the circuit board, reduce system size, and simplify design
– The maximum guaranteed housing temperature is 115¡æ, enhancing the flexibility of the heat dissipation design
Equipped with an overheat protection function that automatically activates protection when the temperature rises, and a temperature output function that converts the temperature of the control IC section into an analog signal, it enhances the flexibility of temperature protection design.



