描述
These gate drive high reliability products are ideal for driving IGBTs, Power and SiC (Silicon Carbide) / GaN (Galium Nitride) MOSFETs used in motor control inverter applications.
SKU : 0e4b430b746d
• RoHS6 Compliant : Pb & Pb-free options available
• Package : 400mil DIP
• IF Min. (mA) : 10
• Prop Delay (tPLH) Max : 0.5 us
• PDD Max (μs) : 0.3
• CMR (min.) (V/μs) : 15000
• Vcm (V) : 1500
• UL Insulation Rating Viso (VRMS) : 5000
• IEC Maximum Working Insulation Voltage Viorm (VPEAK) : 1414
支持顺丰速运，最快隔日达
同型号发票，一对一
老客户享受更优惠的价格
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