描述

This silicon carbide power MOSFET device is developed using STMicroelectronics’ advanced third-generation SiC MOSFET innovative technology. It features extremely low RDS(on) across the entire temperature range, combined with low capacitance and very high switching frequency, which not only improves application frequency and energy efficiency performance but also reduces system size and weight.

– Compliant with AEC-Q213 standard

– Extremely low RDS(on) across the entire temperature range

– High-speed switching performance

– Stable ultra-fast body diode

– Kelvin source pin to improve efficiency