描述

– Compared to existing products, the module size has been reduced by approximately 60%*2, which will facilitate the realization of smaller xEV inverters
There are two types of semiconductor devices: SiC-MOSFET and RC-IGBT (Si).
– The SiC-MOSFET adopts a trench type, resulting in low loss
– RC-IGBT (Si) adopts a novel structure where IGBT and FWD (free-wheeling diode) are integrated on a single chip.
– A rich product lineup based on the J3-T-PM combination*3 supports various xEV inverter designs